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本页收录老挝专利「--」的公开登记要点，由 HOYA CORPORATION 于 2017-11-14 提交申请，当前状态为已注册。公开档案中可核验：申请号 P/665，DIP 编号 LAP665，主管局代码 LA，保护类型 Patent - PCT National Phase。时间线要点：公开/公告日 2022-10-28；授权日 2022-10-24；届满/失效参考日 2037-11-14。技术或外观分类记载为 C03C 3/085、C03C 3/087、C03C 3/091、G11B 5/73。发明人 / 设计人包括 HASHIMOTO Kazuaki、SATO Koichi。代理机构 / 代理人记载为 Tilleke & Gibbins Lao Co., Ltd。公开摘要提示：Provided is a glass for magnetic recording medium substrates, which is an amorphous oxide glass that has, in mol%, an SiO。

专利老挝 DIP

申请号 P/665

申请日期 2017-11-14

申请人 HOYA CORPORATION

代理机构 Tilleke & Gibbins Lao Co., Ltd

类别 C03C 3/085 · C03C 3/087 · C03C 3/091 · G11B 5/73

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基础信息

类型: 专利
申请号: P/665
状态: 已注册
申请人: HOYA CORPORATION
代理机构: Tilleke & Gibbins Lao Co., Ltd
申请日期: 2017-11-14
注册号: P/665
公开/公告日: 2022-10-28
注册/授权日: 2022-10-24
届满日: 2037-11-14
国际分类: C03C 3/085 · C03C 3/087 · C03C 3/091 · G11B 5/73
商品 / 服务: —

办理流程

根据当前状态动态标注

提交申请 2017-11-14
形式审查
实质审查
公开 2022-10-28
授权 2022-10-24

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摘要

Provided is a glass for magretic recording medium substrate, which is an amorphous

oxide glass, wherein, in terms of mol%, ao SiOz content ranges from 45 to 68%; an AlzOr

content ranges from 5 to 20yo; atotal content of SiO2 and AlzO: ranSes from 60 to 80%; a

B2O3 content ranges from 0 to 5%; an MgO content ranges from3 to 28Yo; a CaO content

ratrges from 0 to I 8%; a total content of BaO and Sr0 ranges from 0 to 2%o; a total content of

alkali earth metal oxides ranges fro m 12to 30o/o; a total content of alkali metal oxides ranges

from 3.5 to 15%; and at least one kind selected from the group consisting ofSn oxide and Ce

oxide being included, a total content of Sn oxide and Ce oxide ranges from 0.05 to 2.00%, a

glass transition temperature is equal to or higher than 625oC; a Young's modulus is equal to or

more than 83 GPa; a specific gravity is equal to or less than 2.85; and an average linear

expansion coefficient at 100 to 300'C is equal to or more than 48"10-?/oC

Provided is a glass for magnetic recording medium substrates, which is an amorphous oxide glass that has, in mol%, an SiO